| PART |
Description |
Maker |
| NESG260234 |
3-PIN POWER MINIMOLD 3 - Pin电源MINIMOLD
|
NEC, Corp.
|
| NESG250134-AZ NESG250134-EV09 NESG250134-T1-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) 邻舍npn型硅锗射频晶体管介质输出功率AMPLIFIVATION00mW的）3针奥尔MINIMOLD34包）
|
Duracell
California Eastern Laboratories, Inc.
|
| UPA1981TE-T2 UPA1981TE-T2-A |
2800 mA, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET MINIMOLD, SC-95, 3 PIN
2800 mA, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, MINIMOLD, SC-95, 3 PIN
|
Vishay Intertechnology, Inc.
|
| EDZTE-175.6B EDZTE-176.8B |
5.6 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MINIMOLD, EMD2, SC-79, 2 PIN
6.8 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MINIMOLD, EMD2, SC-79, 2 PIN
|
NXP Semiconductors N.V.
|
| 2SC5752 2SC5752-T1 2SC5752NE67818 |
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
|
NEC
|
| NE3508M04-T2-A |
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
|
California Eastern Laboratories, Inc.
|
| 2SC5746 2SC5746-T3 2SC5746NE819M13 |
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
|
NEC
|
| UPA814TC UPA814TC-T1 NECCORP.-PA814TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp.
|
| NESG4030M14 NESG4030M14-A NESG4030M14-T3 NESG4030M |
NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
|
NEC
|
| NESG220033 NESG220033-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
